| Novel bulk dynamic threshold voltage MOSFET (B-DTMOS) with advanced isolation (SITOS) and gate to shallow-well contact (SSS-C) processes for ultra low power dual gate CMOS H Kotaki, S Kakimoto, M Nakano, T Matsuoka, K Adachi, K Sugimoto, ... Electron Devices Meeting, 1996. IEDM'96., International, 459-462, 1996 | 136 | 1996 |
| DS-CDMA wired bus with simple interconnection topology for parallel processing system LSIs R Yoshimura, TB Keat, T Ogawa, S Hatanaka, T Matsuoka, K Taniguchi Solid-State Circuits Conference, 2000. Digest of Technical Papers. ISSCC …, 2000 | 68 | 2000 |
| Temperature dependence of electron mobility in InGaAs/InAlAs heterostructures T Matsuoka, E Kobayashi, K Taniguchi, C Hamaguchi, S Sasa Japanese journal of applied physics 29 (10R), 2017, 1990 | 64 | 1990 |
| Hot-carrier-induced degradation of N/sub 2/O-oxynitrided gate oxide NMOSFETs T Matsuoka, S Taguchi, H Ohtsuka, K Taniguchi, C Hamaguchi, ... IEEE Transactions on Electron Devices 43 (9), 1364-1373, 1996 | 40 | 1996 |
| Application of noise-enhanced detection of subthreshold signals for communication systems H Ham, T Matsuoka, K Taniguchi IEICE transactions on fundamentals of electronics, communications and …, 2009 | 36 | 2009 |
| Degradation of inversion layer electron mobility due to interface traps in metal‐oxide‐semiconductor transistors T Matsuoka, S Taguchi, QDM Khosru, K Taniguchi, C Hamaguchi Journal of applied physics 78 (5), 3252-3257, 1995 | 35 | 1995 |
| Zone-folding effect in short-period (GaAs/(AlAs superlattices with n in the range 3–15 T Matsuoka, T Nakazawa, T Ohya, K Taniguchi, C Hamaguchi, H Kato, ... Physical Review B 43 (14), 11798, 1991 | 34 | 1991 |
| Monte Carlo study of hot-electron transport in an InGaAs/InAlAs single heterostructure E Kobayashi, C Hamaguchi, T Matsuoka, K Taniguchi IEEE Transactions on Electron Devices 36 (10), 2353-2360, 1989 | 34 | 1989 |
| Test structure for precise statistical characteristics measurement of MOSFETs Y Shimizu, M Nakamura, T Matsuoka, K Taniguchi Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 …, 2002 | 33 | 2002 |
| A 0.5 V feedforward delta-sigma modulator with inverter-based integrator J Wang, T Matsuoka, K Taniguchi ESSCIRC, 2009. ESSCIRC'09. Proceedings of, 328-331, 2009 | 29 | 2009 |
| Ultra low power supply voltage (0.3 V) operation with extreme high speed using bulk dynamic threshold voltage MOSFET (B-DTMOS) with advanced fast-signal-transmission shallow well A Shibata, T Matsuoka, S Kakimoto, H Kotaki, M Nakano, K Adachi, ... VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on, 76-77, 1998 | 28 | 1998 |
| A Biomedical Sensor System with Stochastic A/D Conversion and Error Correction by Machine Learning Y Hirai, T Matsuoka, S Tani, S Isami, K Tatsumi, M Ueda, T Kamata IEEE Access, 2019 | 27 | 2019 |
| Ultralow-power current reference circuit with low temperature dependence T Hirose, T Matsuoka, K Taniguchi, T Asai, Y Amemiya IEICE transactions on electronics 88 (6), 1142-1147, 2005 | 27 | 2005 |
| A 1.0 V, 2.5 mW, transformer noise-canceling UWB CMOS LNA T Kihara, T Matsuoka, K Taniguchi Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE, 493-496, 2008 | 26 | 2008 |
| Toward 1Gfps: Evolution of ultra-high-speed image sensors-ISIS, BSI, multi-collection gates, and 3D-stacking TG Etoh, VTS Dao, K Shimonomura, E Charbon, C Zhang, Y Kamakura, ... Electron Devices Meeting (IEDM), 2014 IEEE International, 10.3. 1-10.3. 4, 2014 | 22 | 2014 |
| Watch-dog circuit for quality guarantee with subthreshold MOSFET current T Hirose, R Yoshimura, T Ido, T Matsuoka, K Taniguchi IEICE transactions on electronics 87 (11), 1910-1914, 2004 | 22 | 2004 |
| Analytical design of a 0.5 V 5GHz CMOS LC-VCO F Yamashita, T Matsuoka, T Kihara, I Takobe, HJ Park, K Taniguchi IEICE Electronics Express 6 (14), 1025-1031, 2009 | 20 | 2009 |
| Parallel bus systems using code-division multiple access technique S Shimizu, T Matsuoka, K Taniguchi Circuits and Systems, 2003. ISCAS'03. Proceedings of the 2003 International …, 2003 | 18 | 2003 |
| Small-Signal and Noise Model of Fully Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Devices for Low-Noise Amplifier G Kim, B Murakami, M Goto, T Kihara, K Nakamura, Y Shimizu, ... Japanese journal of applied physics 45 (9R), 6872, 2006 | 17 | 2006 |
| Scalable Virtual-Ground Multilevel-Cell Floating-Gate Flash Memory Y Yamauchi, Y Kamakura, T Matsuoka IEEE Transactions on Electron Devices 60 (8), 2518-2524, 2013 | 16 | 2013 |
