Intrinsic point defects, impurities, and their diffusion in silicon P Pichler
Springer Science & Business Media, 2012
446 2012 Simulation of critical IC fabrication processes using advanced physical and numerical methods W Jungling, P Pichler, S Selberherr, E Guerrero, HW Potzl
IEEE transactions on electron devices 32 (2), 156-167, 1985
158 1985 Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments M Jacob, P Pichler, H Ryssel, R Falster
Journal of applied physics 82 (1), 182-191, 1997
95 1997 A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon CJ Ortiz, P Pichler, T Fühner, F Cristiano, B Colombeau, NEB Cowern, ...
Journal of applied physics 96 (9), 4866-4877, 2004
82 2004 Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs V Uhnevionak, A Burenkov, C Strenger, G Ortiz, E Bedel-Pereira, V Mortet, ...
IEEE Transactions on Electron Devices 62 (8), 2562-2570, 2015
73 2015 Determination of aluminum diffusion parameters in silicon O Krause, H Ryssel, P Pichler
Journal of Applied Physics 91 (9), 5645-5649, 2002
73 2002 Simulation of critical IC-fabrication steps P Pichler, W Jungling, S Selberherr, E Guerrero, HP Potzl
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 1985
73 1985 Measurements of thermophysical properties of solid and liquid NIST SRM 316L stainless steel P Pichler, BJ Simonds, JW Sowards, G Pottlacher
Journal of Materials Science 55 (9), 4081-4093, 2020
61 2020 Materials Science and Engineering B W Lerch, S Paul, J Niess, S McCoy, T Selinger, J Gelpey, F Cristiano, ...
Materials Science and Engineering B 124 (125), 24-31, 2005
50 2005 Ab Initio Identification of the Nitrogen Diffusion Mechanism in SiliconN Stoddard, P Pichler, G Duscher, W Windl
Physical review letters 95 (2), 025901, 2005
46 2005 Current understanding and modeling of boron-interstitial clusters P Pichler
MRS Online Proceedings Library (OPL) 717, C3. 1, 2002
42 2002 Influence of RTP on vacancy concentrations M Jacob, P Pichler, M Wohs, H Ryssel, R Falster
MRS Online Proceedings Library (OPL) 490, 129, 1997
41 1997 Honeycomb voids due to ion implantation in germanium RJ Kaiser, S Koffel, P Pichler, AJ Bauer, B Amon, A Claverie, ...
Thin Solid Films 518 (9), 2323-2325, 2010
40 2010 Advanced activation of ultra-shallow junctions using flash-assisted RTP W Lerch, S Paul, J Niess, S McCoy, T Selinger, J Gelpey, F Cristiano, ...
Materials Science and Engineering: B 124, 24-31, 2005
40 2005 Anomalous Impurity Segregation and Local Bonding Fluctuation in -Si G Fisicaro, K Huet, R Negru, M Hackenberg, P Pichler, N Taleb, ...
Physical Review Letters 110 (11), 117801, 2013
39 2013 Current understanding and modeling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions B Colombeau, AJ Smith, NEB Cowern, BJ Pawlak, F Cristiano, R Duffy, ...
MRS Online Proceedings Library (OPL) 810, C3. 6, 2004
39 2004 Germanium substrate loss during thermal processing RJ Kaiser, S Koffel, P Pichler, AJ Bauer, B Amon, L Frey, H Ryssel
Microelectronic engineering 88 (4), 499-502, 2011
37 2011 Distribution and segregation of arsenic at the SiO2/Si interface C Steen, A Martinez-Limia, P Pichler, H Ryssel, S Paul, W Lerch, L Pei, ...
Journal of Applied Physics 104 (2), 2008
36 2008 Radiation-enhanced diffusion during high-temperature ion implantation R Schork, P Pichler, A Kluge, H Ryssel
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1991
32 1991 Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect G Ortiz, C Strenger, V Uhnevionak, A Burenkov, AJ Bauer, P Pichler, ...
Applied Physics Letters 106 (6), 2015
31 2015