Pascal Pochet
Pascal Pochet
Univ. Grenoble Alpes
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Energy landscape of fullerene materials: a comparison of boron to boron nitride and carbon
S De, A Willand, M Amsler, P Pochet, L Genovese, S Goedecker
Physical review letters 106 (22), 225502, 2011
Order-disorder transformation in Fe-Al under ball milling
P Pochet, E Tominez, L Chaffron, G Martin
Phys. Rev. B 52 (400), 4006, 1995
Single artificial atoms in silicon emitting at telecom wavelengths
W Redjem, A Durand, T Herzig, A Benali, S Pezzagna, J Meijer, ...
Nature Electronics 3 (12), 738-743, 2020
Optimized energy landscape exploration using the ab initio based activation-relaxation technique
E Machado-Charry, LK Béland, D Caliste, L Genovese, T Deutsch, ...
The Journal of chemical physics 135 (3), 2011
Band gap engineering via edge-functionalization of graphene nanoribbons
P Wagner, CP Ewels, JJ Adjizian, L Magaud, P Pochet, S Roche, ...
The Journal of Physical Chemistry C 117 (50), 26790-26796, 2013
The activation-relaxation technique: ART nouveau and kinetic ART
N Mousseau, LK Béland, P Brommer, JF Joly, F El-Mellouhi, ...
Journal of Atomic and Molecular Physics 2012, 2012
Point defect engineering strategies to suppress A-center formation in silicon
A Chroneos, CA Londos, EN Sgourou, P Pochet
Applied Physics Letters 99 (24), 2011
Strain relaxation in CVD graphene: wrinkling with shear lag
MS Bronsgeest, N Bendiab, S Mathur, A Kimouche, HT Johnson, ...
Nano letters 15 (8), 5098-5104, 2015
Control of magnetic properties of epitaxial MnGeC films induced by carbon doping
A Spiesser, I Slipukhina, MT Dau, E Arras, V Le Thanh, L Michez, ...
Physical Review B 84 (16), 165203, 2011
Nitrogen implantation of suspended graphene flakes: Annealing effects and selectivity of sp2 nitrogen species
M Scardamaglia, B Aleman, M Amati, C Ewels, P Pochet, N Reckinger, ...
Carbon 73, 371-381, 2014
Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si
EN Sgourou, D Timerkaeva, CA Londos, D Aliprantis, A Chroneos, ...
Journal of Applied Physics 113 (11), 113506, 2013
Simulation of the enhanced Curie temperature in Mn5Ge3Cx compounds
I Slipukhina, E Arras, P Mavropoulos, P Pochet
Applied Physics Letters 94 (19), 2009
Phase diagram, structure, and magnetic properties of the Ge-Mn system: A first-principles study
E Arras, D Caliste, T Deutsch, F Lançon, P Pochet
Physical Review B 83 (17), 174103, 2011
Vacancy-assisted diffusion in silicon: A three-temperature-regime model
D Caliste, P Pochet
Physical review letters 97 (13), 135901, 2006
Beyond van der Waals Interaction: The Case of MoSe2 Epitaxially Grown on Few-Layer Graphene
MT Dau, M Gay, D Di Felice, C Vergnaud, A Marty, C Beigne, G Renaud, ...
ACS nano 12 (3), 2319-2331, 2018
Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si (001)
M Martin, D Caliste, R Cipro, R Alcotte, J Moeyaert, S David, F Bassani, ...
Applied Physics Letters 109 (25), 2016
Toward Moiré engineering in 2D materials via dislocation theory
P Pochet, BC McGuigan, J Coraux, HT Johnson
Applied Materials Today 9, 240-250, 2017
Revisiting the domain model for lithium intercalated graphite
S Krishnan, G Brenet, E Machado-Charry, D Caliste, L Genovese, ...
Applied Physics Letters 103 (25), 2013
Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance
MT Dau, C Vergnaud, A Marty, F Rortais, C Beigné, H Boukari, ...
Applied Physics Letters 110 (1), 2017
First-principles prediction of stable SiC cage structures and their synthesis pathways
P Pochet, L Genovese, D Caliste, I Rousseau, S Goedecker, T Deutsch
Physical Review B 82 (3), 035431, 2010
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