Self-rectifying bipolar TaOx /TiO2 RRAM with superior endurance over 1012 cycles for 3D high-density storage-class memory CW Hsu, IT Wang, CL Lo, MC Chiang, WY Jang, CH Lin, TH Hou
2013 Symposium on VLSI Technology, T166-T167, 2013
146 2013 Dependence of read margin on pull-up schemes in high-density one selector–one resistor crossbar array CL Lo, TH Hou, MC Chen, JJ Huang
IEEE transactions on electron devices 60 (1), 420-426, 2012
88 2012 Studies of two-dimensional h-BN and MoS2 for potential diffusion barrier application in copper interconnect technology CL Lo, M Catalano, KKH Smithe, L Wang, S Zhang, E Pop, MJ Kim, ...
npj 2D Materials and Applications 1 (1), 42, 2017
59 2017 3D vertical TaOx /TiO2 RRAM with over 103 self-rectifying ratio and sub-μA operating current CW Hsu, CC Wan, IT Wang, MC Chen, CL Lo, YJ Lee, WY Jang, CH Lin, ...
2013 IEEE International Electron Devices Meeting, 10.4. 1-10.4. 4, 2013
58 2013 Opportunities and challenges of 2D materials in back-end-of-line interconnect scaling CL Lo, BA Helfrecht, Y He, DM Guzman, N Onofrio, S Zhang, D Weinstein, ...
Journal of Applied Physics 128 (8), 2020
54 2020 Bipolar RRAM With Multilevel States and Self-Rectifying Characteristics CW Hsu, TH Hou, MC Chen, IT Wang, CL Lo
IEEE electron device letters 34 (7), 885-887, 2013
54 2013 Enhancing interconnect reliability and performance by converting tantalum to 2D layered tantalum sulfide at low temperature CL Lo, M Catalano, A Khosravi, W Ge, Y Ji, DY Zemlyanov, L Wang, ...
Advanced materials 31 (30), 1902397, 2019
47 2019 Statistical model and rapid prediction of RRAM SET speed–disturb dilemma WC Luo, JC Liu, YC Lin, CL Lo, JJ Huang, KL Lin, TH Hou
IEEE transactions on electron devices 60 (11), 3760-3766, 2013
41 2013 Research Update: Recent progress on 2D materials beyond graphene: From ripples, defects, intercalation, and valley dynamics to straintronics and power dissipation Z Lin, Y Lei, S Subramanian, N Briggs, Y Wang, CL Lo, E Yalon, D Lloyd, ...
APL Materials 6 (8), 2018
38 2018 Large-area, single-layer molybdenum disulfide synthesized at BEOL compatible temperature as Cu diffusion barrier CL Lo, K Zhang, RS Smith, K Shah, JA Robinson, Z Chen
IEEE Electron Device Letters 39 (6), 873-876, 2018
33 2018 Dynamically tunable thermal transport in polycrystalline graphene by strain engineering Y Zeng, CL Lo, S Zhang, Z Chen, A Marconnet
Carbon 158, 63-68, 2020
25 2020 Atomically thin diffusion barriers for ultra-scaled Cu interconnects implemented by 2D materials CL Lo, KKH Smithe, R Mehta, S Chugh, E Pop, Z Chen
2017 IEEE International Reliability Physics Symposium (IRPS), 2017
23 2017 Incorporating Niobium in MoS2 at BEOL‐Compatible Temperatures and its Impact on Copper Diffusion Barrier Performance R Zhao, CL Lo, F Zhang, RK Ghosh, T Knobloch, M Terrones, Z Chen, ...
Advanced Materials Interfaces 6 (22), 1901055, 2019
19 2019 BEOL compatible 2D layered materials as ultra-thin diffusion barriers for Cu interconnect technology CL Lo, S Zhang, T Shen, J Appenzeller, Z Chen
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
16 2017 BEOL compatible sub-nm diffusion barrier for advanced Cu interconnects CL Lo, K Zhang, JA Robinson, Z Chen
2018 International Symposium on VLSI Technology, Systems and Application …, 2018
12 2018 On the potential of CRS, 1D1R, and 1S1R crossbar RRAM for storage-class memory CL Lo, MC Chen, JJ Huang, TH Hou
2013 International Symposium on VLSI Technology, Systems and Application …, 2013
8 2013 Modeling and Circuit Analysis of Interconnects with TaS2 Barrier/Liner X Chen, CL Lo, MC Johnson, Z Chen, SK Gupta
2021 Device Research Conference (DRC), 1-2, 2021
6 2021 Symposium On VLSI Technology CW Hsu, IT Wang, CL Lo, MC Chiang, WY Jang, CH Lin, TH Hou
IEEE 2013, T166-T167, 2013
5 2013 npj 2D Mater. Appl. 1, 42 (2017) CL Lo, M Catalano, KKH Smithe, L Wang, S Zhang, E Pop, MJ Kim, ...
5 Ultra-thin diffusion barrier Z Chen, CL Lo
US Patent App. 17/681,817, 2022
2022