Impact of extrinsic variation sources on the device-to-device variation in ferroelectric FET K Ni, A Gupta, O Prakash, S Thomann, XS Hu, H Amrouch 2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020 | 51 | 2020 |
On the channel percolation in ferroelectric FET towards proper analog states engineering K Ni, S Thomann, O Prakash, Z Zhao, S Deng, H Amrouch 2021 IEEE International Electron Devices Meeting (IEDM), 15.3. 1-15.3. 4, 2021 | 33 | 2021 |
Comprehensive variability analysis in dual-port fefet for reliable multi-level-cell storage S Chatterjee, S Thomann, K Ni, YS Chauhan, H Amrouch IEEE Transactions on Electron Devices 69 (9), 5316-5323, 2022 | 24 | 2022 |
Hw/sw co-design for reliable tcam-based in-memory brain-inspired hyperdimensional computing S Thomann, PR Genssler, H Amrouch IEEE Transactions on Computers, 2023 | 21* | 2023 |
All-in-memory brain-inspired computing using fefet synapses S Thomann, HLG Nguyen, PR Genssler, H Amrouch Frontiers in Electronics 3, 833260, 2022 | 19 | 2022 |
On the reliability of in-memory computing: Impact of temperature on ferroelectric TCAM S Thomann, C Li, C Zhuo, O Prakash, X Yin, XS Hu, H Amrouch 2021 IEEE 39th VLSI Test Symposium (VTS), 1-6, 2021 | 19 | 2021 |
Reliability challenges with self-heating and aging in finfet technology H Amrouch, VM van Santen, O Prakash, H Kattan, S Salamin, S Thomann, ... 2019 IEEE 25th International Symposium on On-Line Testing and Robust System …, 2019 | 18 | 2019 |
Iccad tutorial session paper ferroelectric fet technology and applications: From devices to systems H Amrouch, D Gao, XS Hu, A Kazemi, AF Laguna, K Ni, M Niemier, ... 2021 IEEE/ACM International Conference On Computer Aided Design (ICCAD), 1-8, 2021 | 17 | 2021 |
Bti and hcd degradation in a complete 32× 64 bit sram array–including sense amplifiers and write drivers–under processor activity VM van Santen, S Thomann, C Pasupuleti, PR Genssler, N Gangwar, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2020 | 15 | 2020 |
Reliable binarized neural networks on unreliable beyond von-neumann architecture M Yayla, S Thomann, S Buschjäger, K Morik, JJ Chen, H Amrouch IEEE Transactions on Circuits and Systems I: Regular Papers 69 (6), 2516-2528, 2022 | 13 | 2022 |
Cross-layer fefet reliability modeling for robust hyperdimensional computing S Kumar, S Chatterjee, S Thomann, PR Genssler, YS Chauhan, ... 2022 IFIP/IEEE 30th International Conference on Very Large Scale Integration …, 2022 | 11 | 2022 |
Cross-layer reliability modeling of dual-port fefet: Device-algorithm interaction S Kumar, S Chatterjee, S Thomann, YS Chauhan, H Amrouch IEEE Transactions on Circuits and Systems I: Regular Papers, 2023 | 9 | 2023 |
Cryogenic cmos for quantum processing: 5-nm finfet-based sram arrays at 10 k SS Parihar, VM van Santen, S Thomann, G Pahwa, YS Chauhan, ... IEEE Transactions on Circuits and Systems I: Regular Papers, 2023 | 8 | 2023 |
Compact ferroelectric programmable majority gate for compute-in-memory applications S Deng, M Benkhelifa, S Thomann, Z Faris, Z Zhao, TJ Huang, Y Xu, ... 2022 International Electron Devices Meeting (IEDM), 36.7. 1-36.7. 4, 2022 | 7 | 2022 |
Impact of self-heating on performance, power and reliability in finfet technology VM van Santen, PR Genssler, O Prakash, S Thomann, J Henkel, ... 2020 25th Asia and South Pacific Design Automation Conference (ASP-DAC), 68-73, 2020 | 7 | 2020 |
Suppressing channel percolation in ferroelectric fet for reliable neuromorphic applications K Ni, O Prakash, S Thomann, Z Zhao, S Deng, H Amrouch 2022 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2022 | 6 | 2022 |
Joint modeling of multi-domain ferroelectric and distributed channel towards unveiling the asymmetric abrupt DC current jump in ferroelectric FET S Thomann, K Ni, H Amrouch ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference …, 2022 | 5 | 2022 |
Comprehensive Modeling of Switching Behavior in BEOL FeFET for Monolithic 3-D Integration S Kumar, S Thomann, O Prakash, K Ni, YS Chauhan, H Amrouch IEEE Transactions on Electron Devices, 2023 | 3 | 2023 |
Reliability-driven voltage optimization for NCFET-based SRAM memory banks VM van Santen, S Thomann, YS Chauchan, J Henkel, H Amrouch 2021 IEEE 39th VLSI Test Symposium (VTS), 1-7, 2021 | 3 | 2021 |
Cross-layer design for computing-in-memory: From devices, circuits, to architectures and applications H Amrouch, XS Hu, M Imani, AF Laguna, M Niemier, S Thomann, X Yin, ... Proceedings of the 26th Asia and South Pacific Design Automation Conference …, 2021 | 3 | 2021 |