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Jean-Pierre Teyssier
Jean-Pierre Teyssier
Professor of RF Electronics, Limoges University
Email confirmado em keysight.com
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An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR
O Jardel, F De Groote, T Reveyrand, JC Jacquet, C Charbonniaud, ...
IEEE Transactions on Microwave Theory and Techniques 55 (12), 2660-2669, 2007
3062007
40-GHz/150-ns versatile pulsed measurement system for microwave transistor isothermal characterization
JP Teyssier, P Bouysse, Z Ouarch, D Barataud, T Peyretaillade, R Quéré
IEEE Transactions on Microwave Theory and Techniques 46 (12), 2043-2052, 1998
1111998
New trends for the nonlinear measurement and modeling of high-power RF transistors and amplifiers with memory effects
P Roblin, DE Root, J Verspecht, Y Ko, JP Teyssier
IEEE Transactions on Microwave Theory and Techniques 60 (6), 1964-1978, 2012
932012
A drain-lag model for AlGaN/GaN power HEMTs
O Jardel, F De Groote, C Charbonniaud, T Reveyrand, JP Teyssier, ...
2007 IEEE/MTT-S international microwave symposium, 601-604, 2007
612007
An active pulsed RF and pulsed DC load-pull system for the characterization of HBT power amplifiers used in coherent radar and communication systems
C Arnaud, D Basataud, J Nebus, J Teyssier, J Villotte, D Floriot
IEEE Transactions on Microwave Theory and Techniques 48 (12), 2625-2629, 2000
482000
The use of artificial neural networks in nonlinear microwave devices and circuits modeling: An application to telecommunication system design (invited article)
Y Harkouss, J Rousset, H Chehade, E Ngoya, D Barataud, JP Teyssier
International Journal of RF and Microwave Computer‐Aided Engineering 9 (3 …, 1999
481999
A new nonlinear I (V) model for FET devices including breakdown effects
JP Teyssier, JP Viaud, R Quéré
IEEE Microwave and Guided Wave Letters 4 (4), 104-106, 1994
481994
Method and an apparatus for characterizing a high-frequency device-under-test in a large signal impedance tuning environment
J Verspecht, JP Teyssier
US Patent 7,282,926, 2007
472007
A pulsed S-parameters measurement setup for the non-linear characterization of FETs and bipolar power transistors
JP Teyssier, M Campovecchio, C Sommet, J Portilla, R Quéré
1993 23rd European Microwave Conference, 489-493, 1993
461993
Fully integrated nonlinear modeling and characterization system of microwave transistors with on-wafer pulsed measurements
JP Teyssier, JP Viaud, JJ Raoux, R Quere
Proceedings of 1995 IEEE MTT-S International Microwave Symposium, 1033-1036, 1995
451995
Introduction to measurements for power transistor characterization
F De Groote, JP Teyssier, T Gasseling, O Jardel, J Verspecht
IEEE Microwave Magazine 9 (3), 70-85, 2008
402008
Hot S-parameter techniques: 6= 4+ 2
J Verspecht, D Barataud, JP Teyssier, JM Nébus
2005 66th ARFTG Microwave Measurement Conference (ARFTG), 1-9, 2005
402005
Characterizing amplifier modulation distortion using a vector network analyzer
J Verspecht, A Stav, JP Teyssier, S Kusano
2019 93rd ARFTG Microwave Measurement Conference (ARFTG), 1-4, 2019
392019
An improved coupling method for time domain load-pull measurements
F De Groote, J Verspecht, D Barataud, JP Teyssier
2005 European Microwave Conference 1, 4 pp., 2005
362005
A new nonlinear HEMT model for AlGaN/GaN switch applications
G Callet, J Faraj, O Jardel, C Charbonniaud, JC Jacquet, T Reveyrand, ...
International journal of microwave and wireless technologies 2 (3-4), 283-291, 2010
352010
Measurement based nonlinear electrothermal modeling of GaAs FET with dynamical trapping effects
Z Ouarch, JM Collantes, JP Teyssier, R Quere
1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No. 98CH36192 …, 1998
351998
Characterization and modeling of nonlinear trapping effects in power SiC MESFETs
D Siriex, D Barataud, R Sommet, O Noblanc, Z Ouarch, C Brylinski, ...
2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No. 00CH37017 …, 2000
312000
Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer
CK Yang, P Roblin, F De Groote, SA Ringel, S Rajan, JP Teyssier, ...
IEEE transactions on microwave theory and techniques 58 (5), 1077-1088, 2010
302010
A new nonlinear HEMT model for AlGaN/GaN switch applications
O Jardel, G Callet, C Charbonniaud, JC Jacquet, N Sarazin, E Morvan, ...
2009 European Microwave Integrated Circuits Conference (EuMIC), 73-76, 2009
302009
Electrothermal and trapping effects characterisation of AlGaN/GaN HEMTs
C Charbonniaud, S De Meyer, R Quéré, JP Teyssier
Horizon house, 2003
292003
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