| Monolithic 3D integration of logic and memory: Carbon nanotube FETs, resistive RAM, and silicon FETs MM Shulaker, TF Wu, A Pal, L Zhao, Y Nishi, K Saraswat, HSP Wong, ... 2014 IEEE International Electron Devices Meeting, 27.4. 1-27.4. 4, 2014 | 191 | 2014 |
| Multi-level control of conductive nano-filament evolution in HfO 2 ReRAM by pulse-train operations L Zhao, HY Chen, SC Wu, Z Jiang, S Yu, TH Hou, HSP Wong, Y Nishi Nanoscale 6 (11), 5698-5702, 2014 | 189 | 2014 |
| Formation of Anodic Aluminum Oxide with Serrated Nanochannels D Li, L Zhao, C Jiang, JG Lu Nano letters 10 (8), 2766-2771, 2010 | 126 | 2010 |
| Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations L Zhao, S Clima, B Magyari-Köpe, M Jurczak, Y Nishi Applied Physics Letters 107 (1), 2015 | 70 | 2015 |
| Dopant selection rules for desired electronic structure and vacancy formation characteristics of TiO2 resistive memory L Zhao, SG Park, B Magyari-Köpe, Y Nishi Applied Physics Letters 102 (8), 2013 | 64 | 2013 |
| Design and optimization methodology for 3D RRAM arrays Y Deng, HY Chen, B Gao, S Yu, SC Wu, L Zhao, B Chen, Z Jiang, X Liu, ... 2013 IEEE International Electron Devices Meeting, 25.7. 1-25.7. 4, 2013 | 63 | 2013 |
| Ultrathin (∼ 2nm) HfOx as the fundamental resistive switching element: Thickness scaling limit, stack engineering and 3D integration L Zhao, Z Jiang, HY Chen, J Sohn, K Okabe, B Magyari-Köpe, HSP Wong, ... 2014 IEEE International Electron Devices Meeting, 6.6. 1-6.6. 4, 2014 | 46 | 2014 |
| Phase‐Transition‐Induced VO2 Thin Film IR Photodetector and Threshold Switching Selector for Optical Neural Network Applications X Zhou, L Zhao, W Zhen, Y Lin, C Wang, T Pan, L Li, G Du, L Lu, X Cao, ... Advanced Electronic Materials, 2001254, 2021 | 37 | 2021 |
| Dopant selection rules for extrinsic tunability of HfOxRRAM characteristics: A systematic study L Zhao, SW Ryu, A Hazeghi, D Duncan, B Magyari-Köpe, Y Nishi 2013 Symposium on VLSI Technology, T106-T107, 2013 | 34 | 2013 |
| Molecular dynamics study of the switching mechanism of carbon-based resistive memory Y He, J Zhang, X Guan, L Zhao, Y Wang, H Qian, Z Yu IEEE Transactions on Electron Devices 57 (12), 3434-3441, 2010 | 34 | 2010 |
| Cosime: Fefet based associative memory for in-memory cosine similarity search CK Liu, H Chen, M Imani, K Ni, A Kazemi, AF Laguna, M Niemier, XS Hu, ... Proceedings of the 41st IEEE/ACM International Conference on Computer-Aided …, 2022 | 32 | 2022 |
| First principles modeling of charged oxygen vacancy filaments in reduced TiO2–implications to the operation of non-volatile memory devices L Zhao, SG Park, B Magyari-Köpe, Y Nishi Mathematical and Computer Modelling 58 (1-2), 275-281, 2013 | 31 | 2013 |
| Dynamic Modeling and Atomistic Simulations of SET and RESET Operations in TiO2-Based Unipolar Resistive Memory L Zhao, J Zhang, Y He, X Guan, H Qian, Z Yu IEEE Electron Device Letters 32 (5), 677-679, 2011 | 27 | 2011 |
| Polaronic interactions between oxygen vacancies in rutile TiO 2 L Zhao, B Magyari-Köpe, Y Nishi Phyiscal Review B 95 (5), 054104, 2017 | 25 | 2017 |
| Electrochemical simulation of filament growth and dissolution in conductive-bridging RAM (CBRAM) with cylindrical coordinates S Lin, L Zhao, J Zhang, H Wu, Y Wang, H Qian, Z Yu 2012 International Electron Devices Meeting, 26.3. 1-26.3. 4, 2012 | 21 | 2012 |
| 3-D resistive memory arrays: From intrinsic switching behaviors to optimization guidelines H Li, B Gao, HYH Chen, Z Chen, P Huang, R Liu, L Zhao, ZJ Jiang, L Liu, ... IEEE Transactions on Electron Devices 62 (10), 3160-3167, 2015 | 19 | 2015 |
| Improved multi-level control of RRAM using pulse-train programming L Zhao, HY Chen, SC Wu, Z Jiang, S Yu, TH Hou, HSP Wong, Y Nishi Proceedings of Technical Program-2014 International Symposium on VLSI …, 2014 | 19 | 2014 |
| Systematic studies of the effects of group-III dopants (La, Y, Al, and Gd) in Hf0. 5Zr0. 5O2 ferroelectrics by ab initio simulations L Zhao, J Liu, Y Zhao Applied Physics Letters 119 (17), 2021 | 17 | 2021 |
| Wake-Up Free La-Doped HfO2-ZrO2 Ferroelectrics Achieved With an Atomic Layer-Specific Doping Technique Z Weng, Y Qu, Z Lan, J Liu, M Su, J Li, Y Ding, CH Lee, L Zhao, Y Zhao IEEE Electron Device Letters 43 (10), 1665-1668, 2022 | 16 | 2022 |
| Towards high-speed, write-disturb tolerant 3D vertical RRAM arrays HY Chen, B Gao, H Li, R Liu, P Huang, Z Chen, B Chen, F Zhang, L Zhao, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 15 | 2014 |
H.-S. Philip WongProfessor of Electrical Engineering, Stanford UniversityVerified email at stanford.edu
