| Effect of annealing on the magnetic properties of Gd focused ion beam implanted GaN MA Khaderbad, S Dhar, L Pérez, KH Ploog, A Melnikov, AD Wieck Applied Physics Letters 91 (7), 2007 | 71 | 2007 |
| Explosive vapor sensor using poly (3-hexylthiophene) and CuII tetraphenylporphyrin composite based organic field effect transistors RS Dudhe, SP Tiwari, HN Raval, MA Khaderbad, R Singh, J Sinha, ... Applied Physics Letters 93 (26), 2008 | 51 | 2008 |
| Piezoresistive SU-8 cantilever with Fe (III) porphyrin coating for CO sensing CVB Reddy, MA Khaderbad, S Gandhi, M Kandpal, S Patil, KN Chetty, ... IEEE Transactions on Nanotechnology 11 (4), 701-706, 2012 | 46 | 2012 |
| In0.53Ga0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate ML Huang, SW Chang, MK Chen, CH Fan, HT Lin, CH Lin, RL Chu, ... 2015 Symposium on VLSI Technology (VLSI Technology), T204-T205, 2015 | 36 | 2015 |
| High performance In0.53Ga0.47As FinFETs fabricated on 300 mm Si substrate ML Huang, SW Chang, MK Chen, Y Oniki, HC Chen, CH Lin, WC Lee, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 35 | 2016 |
| Electrical actuation and readout in a nanoelectromechanical resonator based on a laterally suspended zinc oxide nanowire MA Khaderbad, Y Choi, P Hiralal, A Aziz, N Wang, C Durkan, ... Nanotechnology 23 (2), 025501, 2011 | 29 | 2011 |
| Variable interface dipoles of metallated porphyrin self-assembled monolayers for metal-gate work function tuning in advanced CMOS technologies MA Khaderbad, U Roy, M Yedukondalu, M Rajesh, M Ravikanth, VR Rao IEEE Transactions on Nanotechnology 9 (3), 335-337, 2010 | 25 | 2010 |
| Porphyrin self-assembled monolayer as a copper diffusion barrier for advanced CMOS technologies MA Khaderbad, R Pandharipande, V Singh, S Madhu, M Ravikanth, ... IEEE transactions on electron devices 59 (7), 1963-1969, 2012 | 24 | 2012 |
| Selective dual silicide formation using a maskless fabrication process flow MA Khaderbad, PY Tsai, Y Okuno US Patent 10,998,241, 2021 | 23 | 2021 |
| Fabrication of unipolar graphene field-effect transistors by modifying source and drain electrode interfaces with zinc porphyrin MA Khaderbad, V Tjoa, M Rao, R Phandripande, S Madhu, J Wei, ... ACS Applied Materials & Interfaces 4 (3), 1434-1439, 2012 | 22 | 2012 |
| Facile fabrication of graphene devices through metalloporphyrin induced photocatalytic reduction MA Khaderbad, V Tjoa, TZ Oo, J Wei, M Sheri, R Mangalampalli, VR Rao, ... RSC advances 2 (10), 4120-4124, 2012 | 22 | 2012 |
| Semiconductor device with source/drain contact formed using bottom-up deposition SL Wang, MA Khaderbad, Y Okuno US Patent 10,854,716, 2020 | 14 | 2020 |
| Metallated porphyrin self assembled monolayers as Cu diffusion barriers for the nano-scale CMOS technologies MA Khaderbad, K Nayak, M Yedukondalu, M Ravikanth, S Mukherji, ... 2008 8th IEEE Conference on Nanotechnology, 167-170, 2008 | 14 | 2008 |
| Method of forming contact plugs for semiconductor device MA Khaderbad, Y Okuno, SL Wang, PY Tsai, SN Lee, TC Tsai US Patent 10,847,413, 2020 | 13 | 2020 |
| Power amplifier linearization using a diode AK Mrunal, M Shirasgaonkar, RM Patrikar MELECON 2006-2006 IEEE Mediterranean Electrotechnical Conference, 173-176, 2006 | 9 | 2006 |
| Contact and via structures for semiconductor devices MA Khaderbad, KC Lin US Patent 11,380,781, 2022 | 7 | 2022 |
| Semiconductor device and methods of forming the same MA Khaderbad, KC Lin, SL Wang, SS Liang, Y Okuno, YY Peng, CH Chu US Patent App. 16/283,838, 2020 | 6 | 2020 |
| Method and structure for barrier-less plug SL Wang, HY Huang, YY Peng, MA Khaderbad, CH Chu, SS Liang, ... US Patent 11,158,539, 2021 | 5 | 2021 |
| Semiconductor device, interconnection structure and method for forming the same MA Khaderbad, Y Okuno, PY Tsai US Patent 10,515,849, 2019 | 5 | 2019 |
| Semiconductor device with sidewall passivation and method of making MA Khaderbad, HW Tsau, CC Lee, DY Lee, HK Wei, CC Hung, H Chang, ... US Patent 10,014,382, 2018 | 5 | 2018 |
Meesala YedukondaluNational Taiwan University, TaipeiVerified email at gate.sinica.edu.tw
