Mrunal Abhijith Khaderbad
Mrunal Abhijith Khaderbad
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Effect of annealing on the magnetic properties of Gd focused ion beam implanted GaN
MA Khaderbad, S Dhar, L Pérez, KH Ploog, A Melnikov, AD Wieck
Applied Physics Letters 91 (7), 2007
Explosive vapor sensor using poly (3-hexylthiophene) and CuII tetraphenylporphyrin composite based organic field effect transistors
RS Dudhe, SP Tiwari, HN Raval, MA Khaderbad, R Singh, J Sinha, ...
Applied Physics Letters 93 (26), 2008
Piezoresistive SU-8 cantilever with Fe (III) porphyrin coating for CO sensing
CVB Reddy, MA Khaderbad, S Gandhi, M Kandpal, S Patil, KN Chetty, ...
IEEE transactions on nanotechnology 11 (4), 701-706, 2012
In0.53Ga0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate
ML Huang, SW Chang, MK Chen, CH Fan, HT Lin, CH Lin, RL Chu, ...
2015 Symposium on VLSI Technology (VLSI Technology), T204-T205, 2015
High performance In0.53Ga0.47As FinFETs fabricated on 300 mm Si substrate
ML Huang, SW Chang, MK Chen, Y Oniki, HC Chen, CH Lin, WC Lee, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
Electrical actuation and readout in a nanoelectromechanical resonator based on a laterally suspended zinc oxide nanowire
MA Khaderbad, Y Choi, P Hiralal, A Aziz, N Wang, C Durkan, ...
Nanotechnology 23 (2), 025501, 2011
Porphyrin self-assembled monolayer as a copper diffusion barrier for advanced CMOS technologies
MA Khaderbad, R Pandharipande, V Singh, S Madhu, M Ravikanth, ...
IEEE transactions on electron devices 59 (7), 1963-1969, 2012
Variable interface dipoles of metallated porphyrin self-assembled monolayers for metal-gate work function tuning in advanced CMOS technologies
MA Khaderbad, U Roy, M Yedukondalu, M Rajesh, M Ravikanth, VR Rao
IEEE Transactions on Nanotechnology 9 (3), 335-337, 2010
Fabrication of unipolar graphene field-effect transistors by modifying source and drain electrode interfaces with zinc porphyrin
MA Khaderbad, V Tjoa, M Rao, R Phandripande, S Madhu, J Wei, ...
ACS Applied Materials & Interfaces 4 (3), 1434-1439, 2012
Facile fabrication of graphene devices through metalloporphyrin induced photocatalytic reduction
MA Khaderbad, V Tjoa, TZ Oo, J Wei, M Sheri, R Mangalampalli, VR Rao, ...
RSC advances 2 (10), 4120-4124, 2012
Metallated porphyrin self assembled monolayers as Cu diffusion barriers for the nano-scale CMOS technologies
MA Khaderbad, K Nayak, M Yedukondalu, M Ravikanth, S Mukherji, ...
2008 8th IEEE Conference on Nanotechnology, 167-170, 2008
Selective dual silicide formation using a maskless fabrication process flow
MA Khaderbad, PY Tsai, Y Okuno
US Patent 10,998,241, 2021
Method of forming contact plugs for semiconductor device
MA Khaderbad, Y Okuno, SL Wang, PY Tsai, SN Lee, TC Tsai
US Patent 10,847,413, 2020
Semiconductor device with source/drain contact formed using bottom-up deposition
SL Wang, MA Khaderbad, Y Okuno
US Patent 10,854,716, 2020
Power amplifier linearization using a diode
AK Mrunal, M Shirasgaonkar, RM Patrikar
MELECON 2006-2006 IEEE Mediterranean Electrotechnical Conference, 173-176, 2006
Bottom-up method for work function tuning in high-k/metal gate stacks in advanced CMOS technologies
MA Khaderbad, R Pandharipande, A Gautam, A Mishra, M Bhaisare, ...
2011 11th IEEE International Conference on Nanotechnology, 269-273, 2011
" Bottom-up" Approaches for Nanoelectronics
MA Khaderbad, A Kushagra, M Ravikanth, VR Rao
IntechOpen, 2010
Hydroxy-phenyl Zn (II) porphyrin self-assembled monolayer as a diffusion barrier for copper-low k interconnect technology
U Roy, MA Khaderbad, M Yedukondalu, MG Walawalkar, M Ravikanth, ...
2009 2nd International Workshop on Electron Devices and Semiconductor …, 2009
Contact and via structures for semiconductor devices
MA Khaderbad, KC Lin
US Patent 11,380,781, 2022
Method and structure for barrier-less plug
SL Wang, HY Huang, YY Peng, MA Khaderbad, CH Chu, SS Liang, ...
US Patent 11,158,539, 2021
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