Shibin Krishna
Shibin Krishna
Post Doctoral Fellow, King Abdullah University of Science and Technology (KAUST)
Email confirmado em nplindia.org
Título
Citado por
Citado por
Ano
Fabrication of non-polar GaN based highly responsive and fast UV photodetector
A Gundimeda, S Krishna, N Aggarwal, A Sharma, ND Sharma, KK Maurya, ...
Applied Physics Letters 110 (10), 103507, 2017
972017
A highly responsive self‐driven UV photodetector using GaN nanoflowers
N Aggarwal, S Krishna, A Sharma, L Goswami, D Kumar, S Husale, ...
Advanced Electronic Materials 3 (5), 1700036, 2017
542017
Pit assisted oxygen chemisorption on GaN surfaces
M Mishra, SK TC, N Aggarwal, M Kaur, S Singh, G Gupta
Physical Chemistry Chemical Physics 17 (23), 15201-15208, 2015
462015
Surface chemistry and electronic structure of nonpolar and polar GaN films
M Mishra, TCS Krishna, N Aggarwal, G Gupta
Applied Surface Science 345, 440-447, 2015
442015
Extenuation of stress and defects in GaN films grown on a metal–organic chemical vapor deposition-GaN/c-sapphire substrate by plasma-assisted molecular beam epitaxy
N Aggarwal, STC Krishna, L Goswami, M Mishra, G Gupta, KK Maurya, ...
Crystal Growth & Design 15 (5), 2144-2150, 2015
382015
GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity
SK Jain, N Aggarwal, S Krishna, R Kumar, S Husale, V Gupta, G Gupta
Journal of Materials Science: Materials in Electronics 29 (11), 8958-8963, 2018
272018
New approach to clean GaN surfaces
M Mishra, S Krishna TC, P Rastogi, N Aggarwal, AKS Chauhan, ...
Materials Focus 3 (3), 218-223, 2014
252014
Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE
S Krishna, N Aggarwal, M Mishra, KK Maurya, S Singh, N Dilawar, ...
Physical Chemistry Chemical Physics 18 (11), 8005-8014, 2016
242016
Ultrafast photoresponse and enhanced photoresponsivity of Indium Nitride based broad band photodetector
S Krishna, A Sharma, N Aggarwal, S Husale, G Gupta
Solar Energy Materials and Solar Cells 172, 376-383, 2017
232017
Probing the correlation between structure, carrier dynamics and defect states of epitaxial GaN film on (112 [combining macron] 0) sapphire grown by rf-molecular beam epitaxy
TCS Krishna, N Aggarwal, GA Reddy, P Dugar, M Mishra, L Goswami, ...
RSC Advances 5 (89), 73261-73267, 2015
212015
Epitaxial growth of high In-content In0. 41Ga0. 59N/GaN heterostructure on (11–20) Al2O3 substrate
S Krishna, N Aggarwal, M Mishra, KK Maurya, M Kaur, G Sehgal, S Singh, ...
Journal of Alloys and Compounds 658, 470-475, 2016
182016
Electronic structure analysis of GaN films grown on r-and a-plane sapphire
M Mishra, SK TC, N Aggarwal, S Vihari, G Gupta
Journal of Alloys and Compounds 645, 230-234, 2015
182015
Surface-engineered nanostructure-based efficient nonpolar GaN ultraviolet photodetectors
M Mishra, A Gundimeda, S Krishna, N Aggarwal, L Goswami, B Gahtori, ...
ACS omega 3 (2), 2304-2311, 2018
162018
Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films
M Mishra, A Gundimeda, S Krishna, N Aggarwal, B Gahtori, N Dilawar, ...
Physical Chemistry Chemical Physics 19 (13), 8787-8801, 2017
162017
Impact on photon-assisted charge carrier transport by engineering electrodes of GaN based UV photodetectors
N Aggarwal, S Krishna, SK Jain, A Arora, L Goswami, A Sharma, ...
Journal of Alloys and Compounds 785, 883-890, 2019
132019
Carrier relaxation dynamics in defect states of epitaxial GaN/AlN/Si using ultrafast transient absorption spectroscopy
P Dugar, M Kumar, SK TC, N Aggarwal, G Gupta
RSC advances 5 (102), 83969-83975, 2015
132015
Facile synthesis and photoluminescence spectroscopy of 3D-triangular GaN nano prism islands
M Kumar, SK Pasha, TCS Krishna, AP Singh, P Kumar, BK Gupta, ...
Dalton Transactions 43 (31), 11855-11861, 2014
132014
Correlation of donor-acceptor pair emission on the performance of GaN-based UV photodetector
S Krishna, N Aggarwal, A Gundimeda, A Sharma, S Husale, KK Maurya, ...
Materials Science in Semiconductor Processing 98, 59-64, 2019
122019
Band alignment and Schottky behaviour of InN/GaN heterostructure grown by low-temperature low-energy nitrogen ion bombardment
SK TC, G Gupta
RSC Advances 4 (52), 27308-27314, 2014
112014
Effect of metal contacts on a GaN/Sapphire-based MSM ultraviolet photodetector
SK Jain, S Krishna, N Aggarwal, R Kumar, A Gundimeda, SC Husale, ...
Journal of Electronic Materials 47 (10), 6086-6090, 2018
102018
O sistema não pode efectuar a operação agora. Tente novamente mais tarde.
Artigos 1–20