| Electric-field control and adiabatic evolution of shallow donor impurities in silicon AS Martins, RB Capaz, B Koiller Physical Review B 69 (8), 085320, 2004 | 109 | 2004 |
| Band gap opening in dual-doped monolayer graphene PA Denis, C Pereyra Huelmo, AS Martins The Journal of Physical Chemistry C 120 (13), 7103-7112, 2016 | 65 | 2016 |
| Conduction-band tight-binding description for Si applied to P donors AS Martins, TB Boykin, G Klimeck, B Koiller Physical Review B 72 (19), 193204, 2005 | 29 | 2005 |
| Optical effects of interdiffusion in GaAs/AlAs heterostructures: Atomic scale calculations B Koiller, AS Martins, H Chacham Applied physics letters 69 (16), 2423-2425, 1996 | 20 | 1996 |
| Group-IV nanosheets with vacancies: A tight-binding extended Hückel study A de Souza Martins, M Veríssimo-Alves Journal of Physics: Condensed Matter 26 (36), 365501, 2014 | 19 | 2014 |
| Atomistic description of shallow levels in semiconductors AS Martins, JG Menchero, RB Capaz, B Koiller Physical Review B 65 (24), 245205, 2002 | 16 | 2002 |
| An extended Hückel study of the electronic properties of III–V compounds and their alloys IA Ribeiro, FJ Ribeiro, AS Martins Solid State Communications 186, 50-55, 2014 | 14 | 2014 |
| Silicon-based spin and charge quantum computation B Koiller, X Hu, RB Capaz, AS Martins, S Das Sarma Anais da Academia Brasileira de Ciências 77, 201-222, 2005 | 13 | 2005 |
| Lennard-Jones binary fluids: A comparative study between the molecular dynamics and Monte Carlo descriptions of their structural properties AP Lima, AS Martins, JSS Martins Physica A: Statistical Mechanics and its Applications 391 (18), 4281-4289, 2012 | 12 | 2012 |
| Energy of Ni/Ni3Al interface: A temperature-dependent theoretical study AS Martins, MF de Campos Materials letters 83, 100-103, 2012 | 11 | 2012 |
| Domain wall structure in metals: A new approach to an old problem AF da Silva Júnior, MF de Campos, AS Martins Journal of Magnetism and Magnetic Materials 442, 236-241, 2017 | 8 | 2017 |
| Mechanisms of interlayer exciton emission and giant valley polarization in van der Waals heterostructures EC Castro, DS Brandão, H Bragança, AS Martins, F Riche, AC Dias, ... Physical Review B 107 (3), 035439, 2023 | 7 | 2023 |
| Spin glass transition in AuFe, CuMn, AuMn, AgMn and AuCr systems AF da Silva Jr, AS Martins, MF de Campos Journal of Magnetism and Magnetic Materials 479, 222-228, 2019 | 5 | 2019 |
| Note: Cold spectra of the electronic transition A2Σ+-X2Π of N2O+ radical: High resolution analysis of the bands 000-100, 100-100, and 001-101 LL Lessa, AS Martins, CE Fellows The Journal of Chemical Physics 143 (16), 2015 | 5 | 2015 |
| Au and Cu Atoms on NaCl (001): a single-atom based memory device prototype? AS Martins, AT da Costa, P Venezuela, RB Muniz The European Physical Journal B 78, 543-546, 2010 | 5 | 2010 |
| Comment on “Line of Dirac Nodes in Hyperhoneycomb Lattices” M Veríssimo-Alves, RG Amorim, AS Martins Physical Review Letters 116 (24), 249701, 2016 | 3 | 2016 |
| An elastic model for the In–In correlations in InxGa1− xAs semiconductor alloys AS Martins, B Koiller, RB Capaz Solid state communications 115 (6), 287-290, 2000 | 3 | 2000 |
| Semiconductor Hetrostructures with Non‐Ideal Interfaces: Electronic Structure and Optical Properties RB Capaz, TG Dargam, AS Martins, H Chacham, B Koiller physica status solidi (a) 173 (1), 235-246, 1999 | 3 | 1999 |
| Revisiting Spin Glasses: Impact of Spin-Spin Interaction Range AF da Silva, AS Martins, MF de Campos, AP Lima Brazilian Journal of Physics 48, 39-45, 2018 | 2 | 2018 |
| Orthogonal and Non-Orthogonal Tight Binding Parameters for III–V Semiconductors Nitrides AS Martins, CE Fellows Brazilian Journal of Physics 46, 621-627, 2016 | 2 | 2016 |
Belita KoillerInstituto de Física, Universidade Federal do Rio de JaneiroVerified email at if.ufrj.br
