Benoit Voisin
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A two-atom electron pump
B Roche, RP Riwar, B Voisin, E Dupont-Ferrier, R Wacquez, M Vinet, ...
Nature communications 4, 1581, 2013
1192013
Few-electron edge-state quantum dots in a silicon nanowire field-effect transistor
B Voisin, VH Nguyen, J Renard, X Jehl, S Barraud, F Triozon, M Vinet, ...
Nano letters 14 (4), 2094-2098, 2014
842014
Electrical Control of g-Factor in a Few-Hole Silicon Nanowire MOSFET
B Voisin, R Maurand, S Barraud, M Vinet, X Jehl, M Sanquer, J Renard, ...
Nano letters 16 (1), 88-92, 2015
792015
Coherent coupling of two dopants in a silicon nanowire probed by Landau-Zener-Stückelberg interferometry
E Dupont-Ferrier, B Roche, B Voisin, X Jehl, R Wacquez, M Vinet, ...
Physical review letters 110 (13), 136802, 2013
782013
Hybrid metal-semiconductor electron pump for quantum metrology
X Jehl, B Voisin, T Charron, P Clapera, S Ray, B Roche, M Sanquer, ...
Physical Review X 3 (2), 021012, 2013
752013
Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy
B Roche, E Dupont-Ferrier, B Voisin, M Cobian, X Jehl, R Wacquez, ...
Physical review letters 108 (20), 206812, 2012
642012
A tunable, dual mode field-effect or single electron transistor
B Roche, B Voisin, X Jehl, R Wacquez, M Sanquer, M Vinet, ...
Applied Physics Letters 100 (3), 032107, 2012
562012
Spatial metrology of dopants in silicon with exact lattice site precision
M Usman, J Bocquel, J Salfi, B Voisin, A Tankasala, R Rahman, ...
Nature nanotechnology 11 (9), 763, 2016
472016
Spatially resolved resonant tunneling on single atoms in silicon
B Voisin, J Salfi, J Bocquel, R Rahman, S Rogge
Journal of Physics: Condensed Matter 27 (15), 154203, 2015
232015
Scaling of Trigate nanowire (NW) MOSFETs to sub-7nm width: 300K transition to Single Electron Transistor
V Deshpande, S Barraud, X Jehl, R Wacquez, M Vinet, R Coquand, ...
Solid-State Electronics 84, 179-184, 2013
222013
Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory
M Usman, R Rahman, J Salfi, J Bocquel, B Voisin, S Rogge, G Klimeck, ...
Journal of Physics: Condensed Matter 27 (15), 154207, 2015
192015
Donor wave functions in Si gauged by STM images
AL Saraiva, J Salfi, J Bocquel, B Voisin, S Rogge, RB Capaz, ...
Physical Review B 93 (4), 045303, 2016
182016
300 K operating full-CMOS integrated Single Electron Transistor (SET)-FET circuits
V Deshpande, R Wacquez, M Vinet, X Jehl, S Barraud, R Coquand, ...
Electron Devices Meeting (IEDM), 2012 IEEE International, 8.7. 1-8.7. 4, 2012
152012
Two-electron states of a group-V donor in silicon from atomistic full configuration interactions
A Tankasala, J Salfi, J Bocquel, B Voisin, M Usman, G Klimeck, ...
Physical Review B 97 (19), 195301, 2018
122018
Control of the ionization state of three single donor atoms in silicon
B Voisin, M Cobian, X Jehl, M Vinet, YM Niquet, C Delerue, ...
Physical Review B 89 (16), 161404, 2014
122014
Control of the ionization state of three single donor atoms in silicon
B Voisin, M Cobian, X Jehl, M Vinet, YM Niquet, C Delerue, ...
Physical Review B 89 (16), 161404, 2014
122014
Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities
V Deshpande, S Barraud, X Jehl, R Wacquez, M Vinet, R Coquand, ...
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the …, 2012
122012
Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots
J Salfi, B Voisin, A Tankasala, J Bocquel, M Usman, MY Simmons, ...
Physical Review X 8 (3), 031049, 2018
112018
Physical Review X
J Salfi, B Voisin, A Tankasala, J Bocquel, M Usman, MY Simmons, ...
11*
Mass Production of Silicon MOS-SETs: Can We Live with Nano-Devices’ Variability?
X Jehl, B Roche, M Sanquer, B Voisin, R Wacquez, V Deshpande, ...
Procedia Computer Science 7, 266-268, 2011
102011
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