| Analysis of stability degradation of SRAMs using a physics-based PBTI model CH Ho, MK Hassan, SY Kim, K Roy IEEE Electron Device Letters 35 (9), 951-953, 2014 | 11 | 2014 |
| Stochastic Modeling of Positive Bias Temperature Instability in High- Metal Gate nMOSFETs MK Hassan, CH Ho, K Roy IEEE Transactions on Electron Devices 61 (7), 2243-2249, 2014 | 8 | 2014 |
| Innovative Design of Crackstop Wall for 14nm Technology Node and Beyond M Rabie, NA Polomoff, MK Hassan, VL Calero-DdelC, D Degraw, ... 2018 IEEE 68th Electronic Components and Technology Conference (ECTC), 460-466, 2018 | 7 | 2018 |
| Büttiker Probe-Based Modeling of TDDB: Application to Dielectric Breakdown in MTJs and MOS Devices AK Reza, MK Hassan, K Roy IEEE Transactions on Electron Devices 64 (8), 3337-3345, 2017 | 7 | 2017 |
| Extremely-Low Threshold Voltage FinFET for 5G mmWave Applications A Razavieh, Y Chen, T Ethirajan, M Gu, S Cimino, T Shimizu, MK Hassan, ... IEEE Journal of the Electron Devices Society 9, 165-169, 2020 | 6 | 2020 |
| Adaptive accelerated aging for 28 nm HKMG technology D Patra, AK Reza, MK Hassan, M Katoozi, EH Cannon, K Roy, Y Cao Microelectronics Reliability 80, 149-154, 2018 | 6 | 2018 |
| Adaptive Accelerated Aging with 28nm HKMG Technology D Patra, AK Reza, MK Hassan, M Katoozi, E Cannon, K Roy, Y Cao International Reliability Physics Symposium, CR-2.1-CR-2.4, 2017 | 6 | 2017 |
| TDDB in HfSiON/SiO2 dielectric stack: Büttiker probe based NEGF modeling, prediction and experiment AK Reza, MK Hassan, D Patra, A Bansal, Y Cao, K Roy International Reliability Physics Symposium, DG-5.1-DG-5.6, 2017 | 6 | 2017 |
| Multiple Workfunction High Performance FinFETs for Ultra-low Voltage Operation M Togo, R Asra, P Balasubramaniam, X Zhang, H Yu, S Yamaguchi, ... 2018 IEEE Symposium on VLSI Technology, 81-82, 2018 | 5 | 2018 |
| TCAD Simulation on FinFET n-type Power Device HCI Reliability Improvement B Zhu, EM Bazizi, JHM Tng, Z Li, EK Banghart, MK Hassan, Y Hu, D Zhou, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2019 | 4 | 2019 |
| Investigation of dependence between time-zero and time-dependent variability in high-κ NMOS transistors MK Hassan, K Roy Microelectronics Reliability 70, 22-31, 2017 | 4 | 2017 |
| Statistical modeling and simulation of variability and reliability of CMOS technology MK Hassan Purdue University, 2016 | 4 | 2016 |
| Selective shallow trench isolation (STI) fill for stress engineering in semiconductor structures AK Jha, H Yu, X Dou, X Wu, C Dongil, EK Banghart, MK Hassan US Patent 10,522,679, 2019 | 3 | 2019 |
| Bandwidth Estimation of External Electrooptic Modulators With Traveling-Wave Electrodes MS Alam, MS Ali, MK Hassan, SMM Haque, MA Rahman, MR Uddin 2006 International Conference on Electrical and Computer Engineering, 237-240, 2006 | 3 | 2006 |
| Electrical Characteristics of LDD and LDD-free FinFET Devices of Dimension Compatible with 14nm Technology Node Y Du, MK Hassan, R Zhao, X Wan, M Joshi IEEE Journal of the Electron Devices Society, 2020 | 1 | 2020 |
| BEoL Layout Design Considerations to Mitigate CPI Risk MA Rabie, T Raman, F Mirza, NA Polomoff, D Faruqui, S Pozder, ... 2018 IEEE International Interconnect Technology Conference (IITC), 64-66, 2018 | 1 | 2018 |
| Addressing crosstalk issue in on-chip carbon nanotube interconnects using negative capacitance MK Hassan, MS Rahaman, MH Chowdhury 2011 IEEE International Symposium of Circuits and Systems (ISCAS), 1407-1410, 2011 | 1 | 2011 |
| Characteristic Analysis of Traveling Wave Electrooptic Modulators on Lithium Niobate Substrate MS Alam, MK Hassan, MS Ali International Journal of Microwave and Optical Technology (IJMOT) 5 (3), 166-175, 2010 | 1 | 2010 |
| Analysis of X-cut lithium niobate electrooptic modulators with backside slots MK Hassan, MS Alam 2008 International Conference on Electrical and Computer Engineering, 551-554, 2008 | | 2008 |
| Microwave characterization of lithium niobate electrooptic modulators with traveling wave electrodes MS Alam, MK Hassan, MS Ali 2008 International Conference on Computer and Communication Engineering, 118-122, 2008 | | 2008 |
Ahmed Kamal RezaTCAD Engineer, Intel CorporationVerified email at intel.com
